View Full Version : Memory timing terminology
06-01-07, 01:49 PM
Hi all you experts. I need help with the following memory timing terminologies. In the BIOS, Asus or AMI/Award put them differently and I can't seem to figure out exactly what they mean or refer to.
(This is a copy and paste from Everest window).
@ 400 MHz 5-5-5-15 (CL-RCD-RP-RAS) / 22-42-4-6-3 (RC-RFC-RRD-WR-WTR)
I don't have much trouble with the first group, it's the second group that I'm completely lost.
06-01-07, 02:20 PM
To quote tony : Dram Write Recovery time 6 is ultra lose and good for high memory overclocks, 4 is about as tight as most dimms will go, keep this in mind as you test.
DRAM TRFC simple rule for this option. If your memory is Micron IC based you may be able to go as low as 20, everything else we have found 35 works best. Options are 20 25 30 35 and 42. obviously 42 is very lose and will allow higher overclocks.
TRRD Options 0 to 15, around 10 is where most leave this, no big effect on performance.
Rank Write to Read delay Real important timing, start at 10 some dimms may even need 12, tigher for more performance.
Read to Precharge delay again important timing, start at 10 with some dimms needing 12, tighter for more performance.
Write to precharge delay again another important sub timing, same rules..start at 10 or 12, tighter for more performance.
Static Read Control Disable for moderate to high overclocks.
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