This week, the company announced the development of the industry's first DDR4 DRAM using 30nm-class technology. Dong Soo Jun, president, memory division, Samsung Electronics noted the following: "The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application." Of course, the primary number used in standard DIMMs today is DDR3, and many high-end GPUs use GDDR5 video memory.
But the new DDR4 module that has been developed here can chieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module. The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data. By employing new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today’s typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.
Samsung is expected to work with a number of server makers to insure completion of JEDEC standardization of DDR4 technologies in the second half of this year, and hopefully we'll see these floating to retail shortly thereafter.
Read more plus the Samsung Official Press Release at HotHardWare
I wonder if the early retail means before 2011 Christmas or we wont see any mass production till early 2012.
In any case I might wait with complete platform upgrade till than.